6 edition of Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices found in the catalog.
March 22, 2006
Written in English
NATO Science Series II: Mathematics, Physics and Chemistry
|The Physical Object|
|Number of Pages||492|
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Proceedings of the NATO Advanced Research Workshop on Defects in Advanced High-K Dielectric Nano-Electronic Semiconductor Devices, St. Petersburg, Russia, from 11. Evgeni Gusev: free download. Ebooks library. On-line books store on Z-Library | B–OK. Download books for free.
Find books. Thin Lu2O3 and Yb2O3 layers grown on Si using Atomic Layer Deposition (ALD) were studied with x-ray photoelectron spectroscopy (XPS) and low energy ion spectroscopy (LEIS).
X2 Semiconductor - $ X2 Semiconductor Diode Eda Electronic Devices Inc A25a Buy Now. For example, electrically active defects in the gate dielectric of the MOSFET are at densities (∼ 10 10 cm −2) that typically cannot be Cited by:.